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AQW213 SW2N65 20000 1233M 00108D 00K101R1 W551C020 1209S
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  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1274 2SD1274A 2SD1274B
DESCRIPTION With TO-220Fa package High VCBO High speed switching APPLICATIONS Power amplifier applicaitons
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25ae )
SYMBOL

PARAMETER
VCBO
VCEO VEBO IC
CHA IN
Collector-base voltage
ES NG
2SD1274 2SD1274A 2SD1274B
MIC E
Open emitter Open base Open collector
CONDITIONS
OND
TOR UC
VALUE 150 200 250 80 6 5
UNIT
V
Collector-emitter voltage
V V A
Emitter-base voltage Collector current (DC)
TC=25ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature
40 W 2 150 -55~150 ae ae
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage 2SD1274 ICBO Collector cut-off current 2SD1274A 2SD1274B IEBO hFE fT tf Emitter cut-off current
2SD1274 2SD1274A 2SD1274B
SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBE
CONDITIONS IC=0.2A, L=25mH IE=1mA, IC=0 IC=5A; IB=1A IC=5A ; VCE=4V VCB=150V; IE=0 VCB=200V; IE=0 VCB=250V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=4V
MIN 80 6
TYP.
MAX
UNIT V V
1.6 1.5
V V
1
mA
IN
Fall time
DC current gain

Transition frequency
ANG CH
MIC E SE
IC=0.5A ; VCE=10V
DUC ON
14 40
TOR
50 |I 1.0
A
MHz |I s
IC=5A ;IB1=0.8A VEB=-5V
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1274 2SD1274A 2SD1274B

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.15 mm)
3


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